tm november 2008 FDA24N50F n-channel mosfet ?2007 fairchild semiconductor corporation FDA24N50F rev. a www.fairchildsemi.com 1 unifet tm FDA24N50F n-channel mosfet 500v, 24a, 0.2 ? features ?r ds(on) = 0.166 ? ( typ.)@ v gs = 10v, i d = 12a ? low gate charge ( typ. 65nc) ? low c rss ( typ. 32pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. d g s to-3pn gs d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 24 a -continuous (t c = 100 o c) 14 i dm drain current - pulsed (note 1) 96 a e as single pulsed avalanche energy (note 2) 1872 mj i ar avalanche current (note 1) 24 a e ar repetitive avalanche energy (note 1) 2.7 mj dv/dt peak diode recovery dv/dt (note 3) 15 v/ns p d power dissipation (t c = 25 o c) 270 w - derate above 25 o c2.2w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.46 o c/w r cs thermal resistance, case to sink typ. 0.24 r ja thermal resistance, junction to ambient 40
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDA24N50F FDA24N50F to-3pn - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.6-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 a v ds = 400v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 12a - 0.166 0.2 ? g fs forward transconductance v ds = 20v, i d = 12a (note 4) -30-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 3240 4310 pf c oss output capacitance - 450 600 pf c rss reverse transfer capacitance - 32 48 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 24a v gs = 10v (note 4, 5) -6585nc q gs gate to source gate charge - 18 - nc q gd gate to drain ?miller? charge - 26 - nc t d(on) turn-on delay time v dd = 250v, i d = 24a r g = 25 ? (note 4, 5) - 49 108 ns t r turn-on rise time - 105 220 ns t d(off) turn-off delay time - 165 340 ns t f turn-off fall time - 87 185 ns i s maximum continuous drain to source diode forward current - - 24 a i sm maximum pulsed drain to source diode forward current - - 96 a v sd drain to source diode forward voltage v gs = 0v, i sd = 24a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 24a di f /dt = 100a/ s (note 4) - 264 - ns q rr reverse recovery charge - 1.4 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 6.5mh, i as = 24a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 24a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 60 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.5 45678 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0 20406080 0.15 0.20 0.25 0.30 0.35 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.6 1.0 1.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 150 0.1 1 10 0 1500 3000 4500 6000 7500 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0204060 0 2 4 6 8 10 *note: i d = 24a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] 70
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -75 -25 25 75 125 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 12a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 200 60 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 6 12 18 24 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.46 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 7 mechanical dimensions to-3pn dimensions in millimeters
FDA24N50F n-channel mosfet FDA24N50F rev. a www.fairchildsemi.com 8 rev. i34 trademarks the following includes registered and unregistered trademarks and serv ice marks, owned by fairchild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make cha nges without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit descri bed herein; neither does it convey any license under its patent rights, nor the rights of others. these sp ecifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reas onably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp-spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world 1mw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supermos? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design sp ecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specific ations. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production this datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only.
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